半导体电极的平带电位

平带电位(E_(fb))是半导体/电解质溶液体系的重要概念,是半导体电极在平带状态时的电极电位,它是半导体电极特有的可以实验测定的物理量。利用Mott-Schottky曲线以及光电化学等方法可以测定平带电位,判断半导体的类型以及估算半导体的载流子浓度,其数值可用于推测半导体的能级结构,确定半导体材料的价带或导带能级位置。这对于与太阳能开发利用相关的半导体光催化和光电化学研究都是非常重要的。本文分析了半导体电极的能带弯曲及影响因素,首次提出半导体界面层内费米能级弯曲,阐明半导体电极平带电位的物理意义及其测定方法,以帮助初学者理解和应用平带电位。

Flat band Potential of Semiconductor Electrodes

Flat band potential (Efb) is an important concept for the system of semiconductor/electrolyte solution. It is a potential when the band is at flat state. It is special characteristics to semiconductors and it can be measured by experiments such as Mott-Schottky curve and the measurement the relationship of photocurrent and applied potentials. Besides, the semiconductor type and its carrier density can be induced from the measurement of Efb. The band structure including the conductive or valence band position of semiconductor can be obtained from Efb. This is important for the photocatalysis and photoelectrochemical process of semiconductors, which are related to the applications of solar energy. In this paper, energy band bending of semiconductor and its influence factors are analyzed in detail.It is proposed that the Fermi energy is bended in the interface of semiconductors. Furthermore, the meaning, measurements and applications of Efb are summarized in order to help the students to understand and use it. Welcome comments from the readers.