含硒杂环萘二酰亚胺衍生物的合成及其场效应性能研究

萘二酰亚胺(NDI)类化合物由于其较好的平面性和较强的接受电子能力,被广泛应用于有机场效应晶体管(OFETs)和有机太阳能电池中(OSCs)。然而,高迁移率的n型和双极性NDI类半导体材料较少。基于此,本文设计合成了核位硒杂环修饰的NDI衍生物,通过引入1,2-二硒苯和1,2-二硒萘基团,对其能级进行了有效的调控,获得了两个新型的窄带隙NDI衍生物。通过溶液旋涂法,制备了两种材料的底栅底接触场效应晶体管器件,二者在空气中都表现出n型半导体特性,退火温度为120℃时性能达到最优,分别为1×10~(-3)cm~2·V~(-1)·s~(-1)(4)和5×10~(-3)cm~2·V~(-1)·s~(-1)(5)。同时,通过原子力显微镜和X射线衍射对材料薄膜的退火过程进行了研究。

Naphthalene Diimides Containing Selenium Heterocyclic for Organic Field Effect Transistors

Naphthalene diimide (NDI) compounds are widely used in organic field effect transistors (OFETs) and organic solar cells (OSCs) due to their good planarity and strong ability to accept electrons. However, there are fewer high-mobility n-type and bipolar NDI-based semiconductor materials. Based on this, we designed and synthesized two NDI derivative containing selenium heterocycle. By introducing 1,2-diselenobenzene and 1,2-diselonaphthalene groups, the energy level is effectively regulated and obtained two narrow band gap naphthalene diimide derivatives. Through solution spin coating method, the field effect transistor devices with bottom gate and bottom contact of two materials were prepared. Both of them show n-type semiconductor characteristics in air, and their electron mobilities reached 1×10-3cm2?V-1?s-1 (4) and 5×10-3cm2?V-1?s-1 (5) when annealed at 120 oC. At the same time, the annealing process of the film was studied by atomic force microscope and X-ray diffraction.