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硅基分子印迹技术制备铜离子选择电极
引用本文:刘亚强,刘艳,黄西潮.硅基分子印迹技术制备铜离子选择电极[J].化学研究,2008,19(3):70-73.
作者姓名:刘亚强  刘艳  黄西潮
作者单位:渭南师范学院,化学传感器研究所,陕西,渭南,714000
基金项目:陕西省教育厅资助项目,渭南师范学院专项资助项目 
摘    要:以3-(2-氧基乙基氨基)丽基三甲氧基硅烷作为功能分子,铜离子为模板,将分子印迹技术与溶胶凝胶技术相结合,制备了铜离子选择电极,探讨了电极的响应机理.该电极对铜离子有较好的能斯特响应特性,其线性响应范围为5.00×10^-2~3.98×10^-6mol·L^-1,斜率为31.5mV/pC(-logc),检出限为1.00×10^-6mol·L^-1.同时该电极显示了较好的选择性,重现性和稳定性.

关 键 词:分子印迹  溶胶凝胶  铜离子  离子选择电极

Preparation of Cu2+ Selective Electrode by Silica Matrix Molecular Imprinting Technology
LIU Ya-qiang,LIU Yan,HUANG Xi-chao.Preparation of Cu2+ Selective Electrode by Silica Matrix Molecular Imprinting Technology[J].Chemical Research,2008,19(3):70-73.
Authors:LIU Ya-qiang  LIU Yan  HUANG Xi-chao
Institution:(Institute of Chemical Sensors, Weinan Teachers' College, Weinan 714000, Shaanxi, China)
Abstract:By using 3-(2-aminoethylamino)propyltrimethoxysilane as functional molecule,and copper ion as template,copper ion selective electrode is prepared.The process includes the combination of two technologies of sol-gel and molecular imprinting.The mechanism of responding of the electrode is also discussed.Its linear responding scope is 5.00×10-2~3.98×10-6 mol · L-1,with the slope of 31.5 mV/pC to copper ion,and the detect limiting is 1.00×10-6 mol · L-1.Besides,the electrode shows better selectivity,reproducibility and stability.
Keywords:molecular imprinting  sol-gel  copper ion  ion-selective electrode
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