| Bi12SiO20晶体下降法生长及Pt包裹缺陷研究 |
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| 引用本文： | 张爱琼,徐家跃,范世.Bi12SiO20晶体下降法生长及Pt包裹缺陷研究[J].化学研究,2004,15(3):1-5. |
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| 作者姓名： | 张爱琼 徐家跃 范世 |
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| 作者单位： | 中国科学院,上海硅酸盐研究所,上海,200050;中国科学院,上海硅酸盐研究所,上海,200050;中国科学院,上海硅酸盐研究所,上海,200050 |
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| 摘 要： | 采用改进的坩埚下降法成功生长了硅酸铋Bi12SiO20(BSO)单晶,探讨了工艺参数对晶体生长的影响.用电子探针方法研究了硅酸铋晶体中的铂金包裹体及其相关缺陷.铂金包裹物的尺寸一般在30μm～5mm之间.包裹物经常导致晶体开裂,使成品率大为降低.铂坩埚中的杂质是导致坩埚受侵蚀的主要原因,通过延长铂坩埚熔炼时间和适当降低晶体生长炉温,可明显减少铂包裹体及其相关缺陷.通过优化生长工艺,获得了尺寸为50mm×35mm×35mm的优质BSO单晶.
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| 关 键 词： | 铂缺陷 晶体生长 硅酸铋 坩埚下降法 |
Bridgman Growth and Platinum-related Defects of Bi12SiO20 Crystals |
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| Abstract.Bridgman Growth and Platinum-related Defects of Bi12SiO20 Crystals[J].Chemical Research,2004,15(3):1-5. |
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| Authors: | Abstract |
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| Abstract: | Bismuth silicon oxide Bi12SiO20(BSO) single crystals were grown by the modified vertical Bridgman method. The growth conditions were discussed and the platinum-related defects were investigated by means of Electron Probe Micro Analysis (EPMA). Pt inclusions with a dimension of 30 μm～5 mm were observed in as-grown BSO crystals. The inclusions usually coexisted with cracking, which caused low yield of BSO crystals. The Pt-related inclusions were attributed to the impurities in Pt crucible. Two approaches were employed to reduce Pt-related defects: prolonging melting time during purifying Pt crucible and lowering the furnace temperature during the growth. High quality BSO crystals up to 50 mm×35 mm×35 mm were grown reproducibly. |
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| Keywords: | Pt-related defects crystal growth bismuth silicon oxide vertical Bridgman method |
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