| 氧化石墨烯掺杂PEDOT:PSS作为空穴注入层对有机发光二极管发光性能的影响 |
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| 引用本文： | 杨君礼,武聪伶,李源浩,李菀丽,苗艳勤,郭鹍鹏,刘慧慧,王华,吴永安.氧化石墨烯掺杂PEDOT:PSS作为空穴注入层对有机发光二极管发光性能的影响[J].物理化学学报,2015,31(2):377-383. |
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| 作者姓名： | 杨君礼 武聪伶 李源浩 李菀丽 苗艳勤 郭鹍鹏 刘慧慧 王华 吴永安 |
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| 作者单位： | 1. Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, P. R. China;
2. Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan 030024, P. R. China;
3. Shanxi Guoguang Semiconductor Lighting Engineering Co. Ltd., Taiyuan 030012, P. R. China |
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| 基金项目： | China，International Science&Technology Cooperation Program of China，New Century Excellent Talents in University of Ministry of Education of China (NCET-13-0927).国家自然科学基金，山西省科技创新重点团队，科技部国际科技合作专项项目，教育部新世纪人才计划 |
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| 摘 要： | 研究了氧化石墨烯（GO）掺杂聚（3,4-亚乙二氧基噻吩）:聚（苯乙烯磺酸）（PEDOT:PSS）作为空穴注入层对有机发光二极管发光性能的影响.在PEDOT:PSS水溶液中掺入GO,经过湿法旋涂和退火成膜后,不仅提高了空穴注入层的空穴注入能力和导电率,透光率也得到了相应的提高,从而使得有机发光二极管（OLED）器件的发光性能得到了提升.通过优化GO掺杂量发现,当GO掺杂量为0.8%（质量分数）时,空穴注入层的透光率达到最大值（96.8%）,此时获得的OLED器件性能最佳,其最大发光亮度和最大发光效率分别达到17939 cd·m-2和3.74 cd·A-1.与PEDOT:PSS作为空穴注入层的器件相比,掺杂GO后器件的最大发光亮度和最大发光效率分别提高了46.6%和67.6%.
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| 关 键 词： | 氧化石墨烯 PEDOT:PSS 空穴注入 透光率 导电率 有机发光二极管 |
| 收稿时间： | 2014-09-29 |
Effect of Graphene Oxide Doped PEDOT:PSS as a Hole Injection Layer on the Luminescence Performance of Organic Light-Emitting Diodes |
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| YANG Jun-Li,WU Cong-Ling,LI Yuan-Hao,LI Wan-Li,MIAO Yan-Qin,GUO Kun-Peng,LIU Hui-Hui,WANG Hua,WU Yong-An.Effect of Graphene Oxide Doped PEDOT:PSS as a Hole Injection Layer on the Luminescence Performance of Organic Light-Emitting Diodes[J].Acta Physico-Chimica Sinica,2015,31(2):377-383. |
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| Authors: | YANG Jun-Li WU Cong-Ling LI Yuan-Hao LI Wan-Li MIAO Yan-Qin GUO Kun-Peng LIU Hui-Hui WANG Hua WU Yong-An |
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| Institution: | 1. Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, P. R. China;
2. Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan 030024, P. R. China;
3. Shanxi Guoguang Semiconductor Lighting Engineering Co. Ltd., Taiyuan 030012, P. R. China |
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| Abstract: | We prepared organic light-emitting diodes (OLED) using graphene oxide (GO) doped poly(3,4- ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as a hole injection layer (HIL). The PEDOT:PSS: GO HIL layer was prepared by mixing GO into a PEDOT:PSS aqueous solution and spin-coating onto indiumtin oxide (ITO). The luminance of the ITO/PEDOT:PSS:GO (w)/NPB/Alq3/LiF/Al devices were investigated. High luminance and luminous efficiency at a low turn-on voltage were observed when using PEDOT:PSS:GO as the HIL layer in OLEDs. This can be attributed to its enhanced hole injection ability, conductivity and transparency compared to a PEDOT:PSS HIL layer based OLED. The optimized OLED containing PEDOT:PSS:GO (0.8%, mass fraction) composite HIL layer shows a transmission value of 96.8%, maximum luminance and luminous efficiency of 17939 cd·m-2 (at 7.5 V) and 3.74 cd·A-1 (at 5.5 V), respectively. These were 46.6% and 67.6% higher, respectively, compared to the reference OLED containing a PEDOT:PSS HIL layer. |
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| Keywords: | Graphene oxide PEDOT:PSS Hole injection Transparency Conductivity Organic light-emitting diode |
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