Ni基催化剂上CH4、C2H6和C2H4的裂解积炭性能

采用脉冲微反技术研究了添加半导体氧化物对Ni基催化剂上CH4、C2H6和C2H4的裂解积炭反应特性的影响。结果表明，n型半导体CeO2的添加降低了CH4和C2H6的积炭活性，而p型半导体Co3O4的添加则加速CH4和C2H6的裂解积炭；而对于与CH4和C2H6活化机制不同的C2H4分子的活化，上述影响机制正好相反，n型半导体CeO2的添加促进C2H4的裂解积炭反应，而p型半导体Co3O4的添加则抑制C2H4的裂解积炭反应。XPS分析表明，活性金属Ni与半导体氧化物之间存在的金属 半导体相互作用是这种影响机制的主要因素。

Study on Carbon Deposition of CH4, C2H6 and C2H4 Cracking over Ni-based Catalysts

Influence of the additions of different type semiconductor oxides to Ni-based catalyst on the characteristics of carbon deposition of CH_4,C_2H_6 and C_2H_4 cracking was studied by using pulse microreaction technique.It was discovered that,the addition of n-type semiconductor CeO_2 to Ni catalyst would decrease carbon deposition activity of CH4 and C_2H_6 cracking,whereas the addition of p-type semiconductor Co_3O_4 would increase carbon deposition activity of CH_4 and C_2H_6 cracking.On the other hand,the effect of semiconductor oxide additives on the characteristics of carbon deposition of C_2H_4 cracking is opposite to that of CH_4 and C_2H_6 due to the different activated mechanism.XPS results reveal that there is a metal-semiconductor interaction (MScI) between active metal Ni and semiconductor oxide,which is the most important factor leads to the above phenomenon.