双金属在掺硼金刚石表面电化学共沉积-共溶出模型

采用微分脉冲阳极溶出伏安法, 研究了Ag+、Cu2+、Pb2+、Sn2+、Cd2+等多种共存金属离子在掺硼金刚石(BDD)表面双金属共沉积-共溶出电化学行为. 结果表明, 双金属在掺硼金刚石膜表面的共沉积-共溶出模型是由金属本身的析出电位, 金属之间的相互作用, 金属离子和溶液间的相互作用等多种因素决定的. 微分阳极溶出法的研究结果表明, 双金属在掺硼金刚石电极上的共沉积-共溶出过程表现出金属1溶出-金属2溶出、金属1溶出-析氢-金属2溶出、金属1溶出-金属合金溶出-金属2溶出、金属1溶出-析氢-金属2络合物形成-金属2溶出等四种模型.

Codeposition and Costripping Models for Bimetal on the Boron-Doped Diamond Surface

Codeposition and costripping models for bimetal from Ag+, Cu2+, Pb2+, Sn2+, and Cd2+, on boron-doped diammond (BDD) surface were studied with differential pulse anodic stripping voltammetry. The results showed that bimetal codeposition and costripping models on BDD surface were determined by deposition potential of metals, mutual inferences between two kinds of metals, interactions of metal and electrolytic solution and so on. In addition, four types of codeposition and costripping models for bimetal were summarized: (1) metal 1 stripping-metal 2 stripping; (2) metal 1 stripping-hydrogen evolution-metal 2 stripping; (3) metal 1 stripping-alloy striping-metal 2 stripping; (4) metal 1 stripping-hydrogen evolution-complex forming-metal 2 stripping.