| n-InP/Fe3+, Fe2+界面在小信号电流阶跃下的暂态行为 |
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| 引用本文： | 钱道荪,赵俊.n-InP/Fe3+, Fe2+界面在小信号电流阶跃下的暂态行为[J].物理化学学报,1992,8(2):202-206. |
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| 作者姓名： | 钱道荪 赵俊 |
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| 作者单位： | Department of Applied Chemistry, Shanghai Jiaotong University, Shanghai 200030 |
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| 摘 要： | 应用小信号电流阶跃法研究了光照下n-InP/Fe~(3+), Fe~(2+)界面, 此时电位变化符合双指数规律, 这和理论推导是一致的。在时间很短时, 电位与时间成线性关系, 从直线斜率可求出空间电荷区电容。
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| 关 键 词： | 磷化铟 半导体电极 光电化学 暂态方法 |
| 收稿时间： | 1990-10-04 |
| 修稿时间： | 1991-05-11 |
TRANSIENT BEHAVIOR OF n-InP/Fe~(3+),Fe~(2+) INTERFACE USING SMALL CURRENT STEP |
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| Qian Daosun,Zhao Jun.TRANSIENT BEHAVIOR OF n-InP/Fe~(3+),Fe~(2+) INTERFACE USING SMALL CURRENT STEP[J].Acta Physico-Chimica Sinica,1992,8(2):202-206. |
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| Authors: | Qian Daosun Zhao Jun |
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| Institution: | Department of Applied Chemistry, Shanghai Jiaotong University, Shanghai 200030 |
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| Abstract: | In this paper the transient behavior of n-InP semiconductor electrode in Fe~(3+)/Fe~(2+)solution using current step method is studied. From the equivalent circuit of then-InP electrode under irradiation, a theoretical model for the change of photopoten-tial is derived in the presence of a small signal. The results of the experimentsconfirm the derivation. On the basis of the experiments and the theoretical modelwe also develop a method for measuring the capacitance of the space charge layer(C_(sc)). The observation of the influences of various light intensities is studied also. |
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| Keywords: | Indium phosphide Semiconducting electrode Photoelectrochemistry Transient method |
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