花生酸单分子膜诱导PbS晶体取向生长的研究

以花生酸单分子膜为模板，诱导沉积了PbS半导体纳米粒子，粒径为30～50 nm.实验发现， 由于花生酸单分子膜的诱导作用， 使得PbS晶体在膜上发生取向生长，可以形成三角形、四边形和棒状的PbS纳米粒子.通过改变单分子膜的表面压，考察了表面压对PbS晶体取向生长的影响，结合透射电镜及电子衍射实验，对PbS晶体的生长机制进行了初步的分析和探讨.

The PbS Semiconductor Nanocrystallites Epitaxial Growth under Arachidic Acid Monolayer

It was demonstrated by electron diffraction patterns that lead sulfide (PbS) semiconductor particles films were obtained under arachidic acid monolayer, floating on lead nitrate solution, by injection of S2－ aqueous beneath the monolayer. Different shapes of the PbS semiconductor nanocrystallites, such as triangle, quadrangle and wooden club, were formed under different surface pressure of monolayer. The influence of surface pressure of monolayer preparation of arachdic acid on the structure of PbS nanocrystallites was studied by TEM images and electron diffraction patterns. Controlling surface pressure at 25 mN•m－1, the epitaxial growth of PbS nanocrystallites with their (111) planes parallelling to the (110) planes of monolayer, was proved by TEM images and electron diffraction patterns. A mechanism for the PbS nanocrystallites epitaxial growth was rationalized in terms of lattic matching between the arachidic acid headgroups in the monolayer and the semiconductor nanocrystallites, which were fabricated under monolayer.