化学气相沉积法合成高结晶度的三元系Cd1-xZnxS纳米线

以硫化锌、硫化镉和活性碳粉作为反应物, 利用化学气相沉积方法成功合成了单晶Cd1-xZnxS纳米线. 为了解产物的结构、形貌、组分、微结构以及声子振动模式, 对样品进行了扫描电镜、透射电镜、X射线衍射、能谱分析以及拉曼光谱分析. 分析显示合成的纳米线为六方铅锌矿结构, 生长方向沿着210]方向, 长度均为10 μm, 直径在80-100 nm之间, x的值约为0.2. 拉曼光谱分析显示产物的拉曼峰位与纯CdS相比发生了蓝移.

Synthesis of Highly-Crystallized Ternary Cd1-xZnxS Nanowires by Chemical Vapor Deposition

Single crystal Cd1-xZnxS nanowires were directly synthesized by a simple chemical vapor deposition process using ZnS, CdS, and C powders as starting materials. Scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), energy dispersive X-ray spectrum (EDXS), and Raman spectrum were used to characterize the morphology, microstructure, composition and phonon modes of the products. It was found that single crystal ternary Cd1 -xZnxS nanowires with a composition x of about 0.2 are highly crystallized in a wurtzite structure and grow along the 210] direction with diameters in the range of 80-100 nm and lengths of up to tens of micrometers. Raman spectrumof nanowires showed small blue shifts compared to that of CdS.