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DPA(TCNQ)2的烧孔阈值电压对脉宽的依赖关系
引用本文:于学春,张然,彭海琳,张莹莹,刘忠范.DPA(TCNQ)2的烧孔阈值电压对脉宽的依赖关系[J].物理化学学报,2004,20(6):561-564.
作者姓名:于学春  张然  彭海琳  张莹莹  刘忠范
作者单位:Center for Nanoscale Science and Technology(CNST), College of Chemistry & Molecular Engineering, Peking University, Beijing 100871
基金项目:国家自然科学基金重大项目(6989022),国家自然科学基金(29973001),国家重点研究规划项目(973)(2001CB6105)资助~~
摘    要:合成了一种新的二元电荷转移复合物DPA(TCNQ)2(二丙胺-7,7,8,8-四氰基对亚甲基苯醌),并得到了其单晶ab面的STM高分辨图像,表面晶格常数与体相晶格常数的XRD数据完全一致.用STM成功地写入了5×5的信息点阵,并在5.1 μm×5.1 μm的面积上写入更大规模的信息点阵,写入的可靠性和稳定性都很高.实验发现,烧孔阈值电压强烈依赖于脉宽,这一现象不支持场致蒸发的机理.理论分析表明,它支持热化学烧孔的机理.

关 键 词:DPA(TCNQ)2(dipropylamine  tetracyanoquinodimethane)  高分辨STM图像  场致蒸发  热化学烧孔机理  
收稿时间:2004-02-04
修稿时间:2004年2月3日

The Dependence of Threshold Voltage on Pulse Duration for DPA(TCNQ)2
Yu Xue-Chun Zhang Ran Peng Hai-Lin Zhang Ying-Ying Liu Zhong-Fan.The Dependence of Threshold Voltage on Pulse Duration for DPA(TCNQ)2[J].Acta Physico-Chimica Sinica,2004,20(6):561-564.
Authors:Yu Xue-Chun Zhang Ran Peng Hai-Lin Zhang Ying-Ying Liu Zhong-Fan
Institution:Center for Nanoscale Science and Technology(CNST), College of Chemistry & Molecular Engineering, Peking University, Beijing 100871
Abstract:A binary charge transfer complex—dipropylamine tetracyanoquinodimethane(DPA(TCNQ)2) was synthesized. Using STM we studied the surface topography of the single crystal and observed the molecular arrangement of the ab plane. Section analysis indicates that the surface lattice constants are in nice agreement with the XRD data of the bulk lattice constants. We successfully wrote information dot array on the crystal surface with a writing probability of 100%. Experimental results indicate that pulse width has strong influence on the threshold voltage for hole formation. This result does not support the typical field-induced evaporation mechanism but strongly supports the thermochemical hole burning (THB) mechanism.
Keywords:DPA(TCNQ)_2  STM high resolution image  Field-induced evaporation  Thermochemical hole burning mechanism
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