多孔与平面硅电极界面的电化学行为

研究了重掺杂n-型单晶硅(CSi)在氢氟酸体系中生成多孔硅(PSi)的电化学行为,根据线性极化曲线,选取不同的电流密度,采用恒电流阳极极化法,制备了一系列多孔硅层。利用扫描电子显微镜对其进行了表面和断面形貌的表征,通过线性扫描极化技术和计时电位法,比较了单晶硅电极和多孔硅电极的电化学行为,分析了多孔硅形成前后的塔菲尔曲线和计时电位曲线,给出了多孔硅形成过程中的重要电化学参数,如腐蚀电流、开路电位、塔菲尔斜率等。并对其进行深入分析,根据实验结果,提出了单晶硅电极/电解质界面和多孔硅电极/电解质界面的结构模型,并利用该模型讨论了两种电极界面的电化学特性。

Electrochemical Behavior of Porous and Flat Silicon Electrode Interfaces

The electrochemical responses of heavily doped n-type single-crystal silicon (CSi) during the formation of porous silicon (PSi) layers in hydrofluoric acid-based electrolytes were investigated. A series of PSi layers were fabricated by constantly applying different anodic current densities, which were selected according to the linear polarization curve. The surface and cross-sectional morphologies of the PSi layers were studied by scanning electron microscopy. The electrochemical behavior of CSi and PSi electrodes was compared by linear sweep polarization and chronopotentiometry techniques. The important parameters associated with the electrochemical reactions at the electrodes were evaluated by analyzing the Tafel plots and chronopotentiograms obtained before and after the PSi formation. Structural models of the CSi electrode/electrolyte and PSi electrode/ electrolyte interfaces were suggested based on the experimental data. Accordingly, the interfacial characteristics of CSi and PSi electrodes were discussed.