取向Zn1-xMgxO纳米线阵列的制备及光学特性

采用化学气相沉积(CVD)法, 以高纯ZnO、Mg和活性C混合粉末为原料, 在Si(111)衬底上制备了不同配比的取向Zn1-xMgxO纳米线阵列. 用X射线衍射仪(XRD), 扫描电镜(SEM), 能量色散X射线分析(EDAX)及光致发光(PL)光谱分析仪对样品的晶体结构、形貌、成分组成和光致发光特性进行了分析. 用霍尔效应测量系统测试了不同配比样品的载流子浓度. 实验发现, 当Zn1-xMgxO纳米线阵列中Mg原子相对Zn原子摩尔比x值较小时(x<0.29), XRD衍射谱中只有ZnO晶体标准衍射峰, 没有MgO晶体衍射峰, 说明此时制备的Zn1-xMgxO纳米线样品晶格结构以ZnO纤锌矿结构为主, Mg原子只是作为替位或填隙原子分布在ZnO晶体中. 但当样品中x>0.53时, ZnO与MgO的特征衍射峰同时出现在样品的衍射谱图中, 说明随原料中Mg原子摩尔比的增加, 制备的Zn1-xMgxO纳米阵列样品中ZnO纤锌矿结构与MgO岩盐结构同时存在, 样品呈现多晶体结构形式. 实验还对比了制备的纯ZnO与不同配比的Zn1-xMgxO纳米线阵列的光致发光光谱和载流子浓度, 发现随Mg含量的增加, Zn1-xMgxO阵列紫光发光峰出现了较明显的蓝移现象, 同时, 测试结果也表明, 随Mg含量的增加, Zn1-xMgxO阵列的紫光和绿光峰发光强度都有所减弱, 样品的载流子浓度也随之下降. 文章对实验结果进行了分析和探讨.

Fabrication and Optical Properties of Aligned Zn1-xMgxO Nanowire Arrays

Aligned Zn1-xMgxO nanowire arrays were successfully prepared on Si(111) substrates via the chemical vapor deposition (CVD) method with a mixture of ZnO, Mg, and activated carbon powders as reactants. The microstructures and optical properties of the synthesized Zn1-xMgxO nanowire arrays were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive analysis X-ray (EDAX), and photoluminescence (PL) spectrum analytic apparatus, respectively. While Mg content was achieved or less approximately 0.29 (x, atomic ratio) in ZnO lattice, the crystal lattice of the synthesized samples exhibited wurtzite structure. The Mg atoms were distributed into the ZnO crystal as the interstitial and displaced atoms, and there was no phase separation in preparing Zn1-xMgxO nanowire arrays. However, as the Mg content was up to 0.53 (x) in the fabricated Zn1-xMgxO samples, a clear phase separation phenomena appeared in the Zn1-xMgxO crystal. Compared with the PL spectrum of the pure ZnO nanowire arrays, the analytic results showed that a blue-shift of the near-band edge emission with increasing Mg content was observed in the Zn1-xMgxO arrays. And the relative intensities of green peak at ca 535 nm and UV emission peak at ca 376 nmwere all restrained.