Total reflection x-ray fluorescence as a sensitive analysis method for the investigation of sputtering processes |
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| Authors: | M Sekowski C Steen A Nutsch E Birnbaum A Burenkov P Pichler |
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| Institution: | 1. Chair of Electron Devices, Friedrich-Alexander University of Erlangen-Nuremberg, Cauerstrasse 6, 91058 Erlangen, Germany;2. Fraunhofer Institute of Integrated Systems and Device Technology (IISB), Schottkystrasse 10, 91058 Erlangen, Germany |
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| Abstract: | Angular distributions of sputtered germanium atoms during the grazing incidence of argon ions were investigated. Argon ion beams with angles of incidence of 75° and 80° and with ion energy of 20 keV were used in sputtering experiments. TXRF analysis showed to be an excellent method for measuring the angular distribution of sputtered atoms due to its low detection limit under total reflection conditions. The experimental data are compared to Monte-Carlo simulations. The observed differences are discussed, and suggestions for improving the Monte-Carlo simulation of ion sputtering are made. |
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| Keywords: | Sputtering Germanium Grazing ion incidence TXRF |
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