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Effects of substrate and transfer on CVD-grown graphene over sapphire-induced Cu films |
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| Authors: | BaoShan Hu ZiDong Wei Hiroki Ago Yan Jin MeiRong Xia ZhengTang Luo QingJiang Pan YunLing Liu |
| Institution: | 1. School of Chemistry and Chemical Engineering, Chongqing University, Chongqing, 400044, China 2. Institute for Materials Chemistry and Engineering, Kyushu University, Kasuga, 8168508, Japan 3. Department of Chemical and Biomolecular Engineering, Hongkong University of Science and Technology, Kowloon, Hongkong, China 4. Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, Heilongjiang University, Harbin, 150080, China 5. State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun, 130012, China |
| Abstract: | We differentiated the effects of Cu films deposited on single crystalline a-, r-, and c-plane sapphire substrates upon graphene films synthesized with atmospheric pressure chemical vapor deposition (CVD). The data illustrate that the realization of high-crystalline Cu film is dependent not only on the crystallinity of underlying substrate, but also on the symmetric match of crystallographic geometry between metal film and substrate. We also systematically investigated the effects of PMMA removal on the Raman I D/I G and I G/I 2D values of transferred graphene. The results reveal that different PMMA removal methods do not alter the I D/I G values; instead, the residue of PMMA increases the I G/I 2D values and the thermal decomposition of PMMA leads to higher I G/I 2D values than the removal of PMMA with acetone. The effects of PMMA removal on variations of the Raman spectra are also discussed. |
| Keywords: | graphene CVD growth sapphire substrate crystallographic match transfer Raman spectrum |
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