Optical constants,dispersion energy parameters and dielectric properties of ultra-smooth nanocrystalline BiVO4 thin films prepared by rf-magnetron sputtering |
| |
| Institution: | 1. Engineering Mathematics and Physics Department, Faculty of Engineering (Shoubra), Benha University, Egypt;2. Physics Department, Faculty of Science and Humanities in Ad-Dawadmi, Shaqra University, 11911, Saudi Arabia;1. School of Physics & Information Technology, Shaanxi Normal University, Xi''an, 710119, China;2. State Key Laboratory for Mechanical Behavior of Materials, Xi''an Jiaotong University, Xi''an, 710049, Shaanxi, China;1. Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India;2. Materials Engineering, The Open University, Milton Keynes, MK7 6AA, United Kingdom;1. Applied Science and Technology Department (DISAT), Politecnico di Torino, C.so Duca degli Abruzzi 24, 10129 Torino, Italy;2. Center for Space Human Robotics (IIT@POLITO), Istituto Italiano di Tecnologia, C.so Trento 21, 10129 Torino, Italy;1. Surface Chemistry Laboratory of Electronic Materials, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea;2. Department of Chemical and Biological Engineering, College of Engineering, Sookmyung Women’s University, Seoul 04310, Republic of Korea;1. School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore;2. Singapore-Berkeley Research Initiative for Sustainable Energy (SinBeRISE) CREATE Tower, 1 Create Way, #11-00, Singapore 138602, Singapore;3. Institute of Materials Research and Engineering, 2 Fusionopolis Way, Singapore 138634, Singapore |
| |
| Abstract: | BiVO4 thin films have been prepared through radio frequency (rf) magnetron sputtering of a pre-fabricated BiVO4 target on ITO coated glass (ITO-glass) substrate and bare glass substrates. BiVO4 target material was prepared through solid-state reaction method by heating Bi2O3 and V2O5 mixture at 800 °C for 8 h. The films were characterized by X-ray diffraction, UV–Vis spectroscopy, LCR meter, field emission scanning electron microscopy, transmission electron microscopy and atomic force microscopy. BiVO4 thin films deposited on the ITO-glass substrate are much smoother compared to the thin films prepared on bare glass substrate. The rms surface roughness calculated from the AFM images comes out to be 0.74 nm and 4.2 nm for the films deposited on the ITO-glass substrate and bare glass substrate for the deposition time 150 min respectively. Optical constants and energy dispersion parameters of these extra-smooth BiVO4 thin films have been investigated in detail. Dielectric properties of the BiVO4 thin films on ITO-glass substrate were also investigated. The frequency dependence of dielectric constant of the BiVO4 thin films has been measured in the frequency range from 20 Hz to 2 MHz. It was found that the dielectric constant increased from 145 to 343 at 20 Hz as the film thickness increased from 90 nm to 145 nm (deposition time increased from 60 min to 150 min). It shows higher dielectric constant compared to the literature value of BiVO4. |
| |
| Keywords: | Thin film Sputtering Dielectric constant Optical constants |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
