Effects of Mg doping on the properties of highly transparent conductive and near infrared reflective Zn1−xMgxO:Ga films |
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Authors: | Quan-Bao Ma Li-Ping Zhu Yin-Zhu Zhang Bing-Hui Zhao |
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Institution: | State Key Laboratory of Silicon Materials, Department of Materials, Zhejiang University, Hangzhou 310027, People's Republic of China |
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Abstract: | Highly transparent conductive and near infrared (IR) reflective Gallium-doped ZnMgO (Zn1−xMgxO:Ga) films with Mg content from 0 to 10 at% were deposited on glass substrate by DC reactive magnetron sputtering. X-ray diffraction shows all the ZnMgO:Ga films are polycrystalline and have wurtzite structure with a preferential c-axis orientation. Hall measurements indicate that the resistivity of these films obviously increases with the Mg concentration increasing. The average transmittance of Zn1−xMgxO:Ga films is over 90% in the visible range. All the Zn1−xMgxO:Ga films have low transmittance and high reflectance in the IR region. |
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Keywords: | Zn1&minus xMgxO:Ga thin films Electrical property IR reflective behavior Magnetron sputtering |
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