Thermoelectric properties of Cu-doped n-type (Bi2Te3)0.9–(Bi2−xCuxSe3)0.1(x=0–0.2) alloys |
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| Authors: | JL Cui LD Mao W Yang XB Xu DY Chen WJ Xiu |
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| Institution: | aSchool of Mechanical Engineering, Ningbo University of Technology, Ningbo 315016, China;bCollege of Chemical Engineering and Materials Science, Zhejiang University of Technology, Hangzhou 310014, China;cSchool of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221008, China |
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| Abstract: | n-Type (Bi2Te3)0.9–(Bi2−xCuxSe3)0.1 (x=0–0.2) alloys with Cu substitution for Bi were prepared by spark plasma-sintering technique and their structural and thermoelectric properties were evaluated. Rietveld analysis reveals that approximate 9.0% of Bi atomic sites are occupied by Cu atoms and less than 4.0 wt% second phase Cu2.86Te2 precipitated in the Cu-doped parent alloys. Measurements show that an introduction of a small amount of Cu (x 0.1) can reduce the lattice thermal conductivity (κL), and improve the electrical conductivity and Seebeck coefficient. An optimal dimensionless figure of merit (ZT) value of 0.98 is obtained for x=0.1 at 417 K, which is obviously higher than those of Cu-free Bi2Se0.3Te2.7 (ZT=0.66) and Ag-doped alloys (ZT=0.86) prepared by the same technologies. |
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| Keywords: | Thermoelectric property n-Type (Bi2Te3)0 9– (Bi2− xCuxSe3)0 1 alloys Rietveld analysis |
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