The epitaxial growth of gallium arsenide using triethylarsine

The thermal decomposition of triethylarsine (TEAs) has been studied. It decomposes at a lower temperature than arsine (AsH₃). The decomposition proceeds via a radical process at a temperature above 700°C. Epitaxial growth using TEAs has been investigated. A gallium arsenide (GaAs) layer with good morphology was obtained, but the layer was found to contain a considerable amount of carbon impurity originating from TEAs. The use of TEAs with 10% AsH₃ or with 20% ammonia (NH₃) apparently improves the quality of GaAs layer. A possible scheme for reducing carbon incorporation is discussed.