电感耦合等离子体发射光谱法测定高纯铝中硅

建立电感耦合等离子体发射光谱(ICP-AES)法测定高纯铝中硅元素的分析方法。样品采用碱溶法进行预处理,以氢氧化钠溶液溶解,再加入盐酸、硝酸酸化。选取了硅251.611 nm分析谱线进行分析。硅的质量分数在0.001%~0.01%范围内与光谱强度具有良好的线性关系,线性相关系数为0.9991。该方法检出限为0.00012%,测定结果的相对标准偏差不大于10.2%(n=8),加标回收率为93.2%~104.2%。该方法操作简便,测定结果准确、可靠,适用于快速检测高纯铝中硅元素,具有推广价值。

Determination of silicon in high purity aluminum by inductively coupled plasma atomic emission spectrometry

A method for determining silicon in high purity aluminum by inductively coupled plasma atomic emission spectrometry was established.Sample was dissolved with sodium hydroxide solution,and then acidified with HCl and HNO3.The analytical spectral lines of Si 251.611 nm was selected.The mass fraction of silicon in the range of 0.001%-0.01%had good linear relationship with the spectral intensity,the correlation coefficient was 0.9991.The detection limit of the method was 0.00012%,and the relative standard deviation of the test results was not more than 10.2%(n=8).The recoveries of the samples were 93.2%-104.2%.The method is easy to operate,accurate and reliable.It is suitable for the rapid detection of silicon in pure aluminum and has the value of popularization.