| GaN基异质外延膜中Al组分含量测试方法综述 |
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| 引用本文： | 王雪蓉,郑会保,魏莉萍,刘运传,孟祥艳.GaN基异质外延膜中Al组分含量测试方法综述[J].化学分析计量,2010,19(4):93-96. |
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| 作者姓名： | 王雪蓉 郑会保 魏莉萍 刘运传 孟祥艳 |
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| 作者单位： | 中国兵器工业集团第五三研究所,济南,250031 |
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| 摘 要： | 介绍了目前可用于AlGaN半导体异质外延膜中Al组分含量测定的多种测试技术,包括高分辨X射线衍射技术、光致发光法、紫外-可见光透射光谱法、电子探针法、卢瑟福背散射法等,并对各种测试技术的原理和优缺点进行了概述。
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| 关 键 词： | A1GaN外延膜 高分辨x射线衍射光致发光 电子探针 卢瑟福背散射 |
STUDY ON TECHNOLOGY OF EPITAXIAL AlGaN COMPOSITION DETERMINATION |
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| Wang Xuerong,Zheng Huibao,Wei Liping,Liu Yunchuan,Meng Xiangyan.STUDY ON TECHNOLOGY OF EPITAXIAL AlGaN COMPOSITION DETERMINATION[J].Chemical Analysis And Meterage,2010,19(4):93-96. |
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| Authors: | Wang Xuerong Zheng Huibao Wei Liping Liu Yunchuan Meng Xiangyan |
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| Institution: | (CNGC Institute 53, Jinan 250031, China) |
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| Abstract: | The techniques for determination of Al composition in AlGaN epitaxial films were introuduced, which included high -resolution X - ray diffraction, photoluminescence, UV - visible transmittance spectroscopy, electron microprobe analysis and Rutherford backscattering. The principles of these texting techniques and the advantages and disadvantages were also summarized. |
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| Keywords: | AlGaN epilayer high - resolution X - ray diffraction photoluminescence electron microprobe analysis Rutherford backscattering |
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