Electrical Properties of Ag Thin Films Deposited by the Improved SILAR Method |
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Authors: | Lei Wang Shi‐Zhao Kang |
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Institution: | Department of Chemistry , East China University of Science and Technology , Shanghai, China |
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Abstract: | Ag films were deposited on glass substrates using the successive layer adsorption and reaction (SILAR) method and characterized with XRD and AFM. The I‐V curves of the thicker Ag films obeyed ohmic law because of the formation of the continuous films. After annealing at 300°C in N2, the conductance increased due to the removal of imperfections. Compared with the thicker film, the thinner Ag films showed nonlinear I‐V curves. After annealing, these films were inconductible. This may be ascribed to the destruction of the junction, that existed between the Ag islands. The absorption spectra of the films proved the formation of the Ag islands after annealing. With the thickness of the films further decreasing, the Ag films became insulated. |
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Keywords: | Ag thin film SILAR method electrical properties |
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