Emission characteristics of Cu in Dc voltage modulation applied glow discharge optical emission spectrometry.

In order to obtain the depth profile of a thin film, we investigated the emission characteristics of a voltage modulation glow discharge to optimize the modulation parameters (modulation voltage, offset voltage, and modulation frequency). In this study, a phase-sensitive detection method with a lock-in amplifier to the modulation technique led to a higher sensitivity and a larger signal-to-noise ratio in the emission analysis compared to the normal dc amplification method. Upon increasing the maximum voltage, the emission intensity of the Cu atomic line (CuI 239.34 nm) increased linearly at a modulation voltage of 400 V and an offset voltage of 300 V. On the other hand, the emission intensity was gradually reduced when a modulation frequency increased. It is advantageous for surface analysis that the voltage modulation technique gives a lower sputtering rate rather than the conventional dc discharge.