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Determination of traces of bismuth by quenching of solid-substrate room-temperature phosphorescence from morin-labeled silicon dioxide nano-particles
Authors:Email author" target="_blank">Jia-ming?LiuEmail author  Shi-Rong?Hu  Xiu-mei?He  Xue-lin?Li  Feng-ping?Zhan  Li-qing?Zeng  Long-Di?Li  Guo-hui?Zhu  Xiao-mei?Huang
Institution:(1) Department of Chemistry, Zhangzhou Normal College, Zhangzhou, 363000, P. R. China;(2) Department of Chemistry, Tsinghua University, Beijing, 100084, P. R. China;(3) Department of Food and Chemical Engineering, Zhangzhou Institute of Technology, Zhangzhou, 363000, P. R. China
Abstract:Silicon dioxide nano-particles, diameter 50 nm, containing morin (morin–SiO2) have been synthesized by the sol–gel method. They emit strong and stable room-temperature phosphorescence (SS-RTP) on filter paper as substrate, and bismuth can quench the intensity of the SS-RTP. On this basis a new morin–SiO2 solid-substrate room-temperature phosphorescence-quenching method has been established for determination of traces of bismuth. Reduction of phosphorescence intensity (DeltaIp) is directly proportional to the concentration of bismuth in the working range 0.16–14.4 ag spot–1 (sample volume 0.40 mgrL spot–1, corresponding to the concentration range 0.40–36.0 fg mL–1). The regression equation of the working curve is DeltaIp=14.86+5.279×Bi3+] (ag spot–1) (n=6, r=0.9982). The detection limit of this method is 0.026 ag spot–1 (corresponding to a concentration of 6.5×10–17 g mL–1).This sensitive, reproducible and accurate method has been used for successful analysis of real samples.
Keywords:Bismuth  Solid-substrate room-temperature phosphorescence-quenching method  Silicon dioxide nano-particle containing morin (morin–  SiO2)
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