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Tin colloids and metal-metal oxide films prepared by chemical liquid deposition. III
Authors:G Cardenas-Triviño  M Alvial J  K J Klabunde  O Pantoja M  H Soto Z
Institution:(1) Present address: Facultad de Ciencias Quimicas, Universidad de Concepcion, Casilla 3-C, Concepcion, Chile;(2) Department of Chemistry, Kansas State University, Manhattan, (USA);(3) Facultad de Ciencias Fisicas-Matematicas, Universidad de Concepcion, Chile
Abstract:Colloids and thin metal-metal oxide films have been prepared by a method we call Chemical Liquid Deposition (CLD). The metal is evaporated to yield atoms which are solvated at liquid nitrogen temperature, and upon warming stable liquid colloidal solutions are formed. In the case of tin, the particle size of these colloids ranges between 200–500 Å. Zeta potentials were calculated by a Hückel approximation for most of these negatively charged particles. Upon solvent removal, colloidal particles coalesce to form films, which contain some residual solvent. The synthesis of colloids and films from Sn with acetone, 2-butanone, THF, ethanol, 2-propanol, DMF and DMSO is reported. FTIR, High Resolution Mass Spectrometry, Thermogravimetric Analyses (TGA) and Scanning Electron Microscopy (SEM) film characterization has been carried out. These studies indicate that solvents are incorporated into the films. The resistivity studies showed that they more behave as semiconductors than pure metals. TGA studies reveal that loss of weight occurs within 200–500°C. The films are very stable with 5–10% weight loss at 550°C. SEM reveals their surface morphology. Mössbauer gives information about oxidation states of some tin films.
Keywords:Metal colloids  metal particles  films  chemical liquid deposition  semiconductors
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