Effect of thermal annealing on the microstructure of P3HT thin film investigated by RAIR spectroscopy |
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| Institution: | 1. Advanced Materials Bio & Integration Research (AMBIR) Laboratory, Department of Electrical Engineering, University of South Florida, United States;2. Institute of Polymers, Composites and Biomaterials, National Research Council of Italy, Mostra d’Oltremare, Pad.20, Naples, Italy;1. School of Integrative Engineering, Chung-Ang University, 84 Heukseok-Ro, Dongjak-gu, Seoul 06974, Republic of Korea;2. Department of Chemistry Education, Graduate School of Chemical Materials, Institute for Plastic Information and Energy Materials, Pusan National University, 63-2 Busandaehak-ro, Busan 46241, Republic of Korea;3. Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;4. Nanomaterials & Nanotechnology Department, Advanced Materials Division, Central Metallurgical R & D Institute, P.O. Box 87, Helwan, Egypt;5. Canatu, Ltd., Konalankuja 5, FI-00390 Helsinki, Finland;6. Department of Applied Physics, Aalto University School of Science, FI-00076 Aalto, Finland;1. Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8561, Japan;2. JST, PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012, Japan;3. Research Center for Organic Electronics (ROEL), Graduate School of Organic Materials Science, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata, 992-8510, Japan;4. Department of Physics and Astronomy, Rutgers University, Piscataway, NJ, 08854, USA;5. Institute for Advanced Materials Devices and Nanotechnology (IAMDN), Rutgers University, Piscataway, NJ, 08854, USA |
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| Abstract: | The influence of thermal annealing on the structural ordering and orientation rearrangement of as cast P3HT thin film (<100 nm) has been studied by reflection absorption infrared spectroscopy (RAIR). In order to erase the effect of temperature on the spectral intensity, two thermal procedures have been used to investigate the annealing-induced structural change of P3HT thin film. One is the continuous heating mode, in which the RIAR spectra were in situ collected during the heating process. The other is the stepwise heating mode, that is the isothermal annealing, and the spectra were ex situ collected at room temperature after the thermal treatment. It is found that thermal annealing can enhance the π–π interaction in P3HT crystal domain, whereas the improvement on the degree of crystallinity is not so obviously. Meanwhile, our results suggest that annealing-induced structural rearrangement on π–π stacking is irreversible, whereas the change on hexyl side chain packing is reversible. |
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| Keywords: | P3HT Annealing Thin film RAIR |
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