| 镍、铅、LB膜对n-Si光电极的修饰 |
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| 引用本文： | 邓薰南,印建华,范钦柏,沈增德,梁培辉,张伟清.镍、铅、LB膜对n-Si光电极的修饰[J].化学学报,1993,51(5):432-437. |
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| 作者姓名： | 邓薰南 印建华 范钦柏 沈增德 梁培辉 张伟清 |
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| 作者单位： | 上海科学技术大学电化学研究室，上海科学技术大学电化学研究室，上海科学技术大学电化学研究室，上海科学技术大学电化学研究室，中国科学院上海光学精密机械研究所，中国科学院上海光学精密机械研究所 上海 201800，上海 201800，上海 201800，上海 201800，上海 201800，上海 201800 |
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| 摘 要： | 本文研究了金属(镍、铅)与Langmuir-Blodgett膜对n-Si电极光电化学行为的影响, 观察到镍与铅能增强该电极的能量转换效率与稳定性。测定和讨论了八种有机物得的LB膜对n-Si/Ni电极的修饰作用, 最佳的长链香豆素LB膜使其效率倍增。还研究了具有MIS器件结构的Si/LB/Al电极的光电化学行为, 发现它具有良好的光电效应。
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| 关 键 词： | 电极 硅 镍 铅 化学修饰电极 光电化学 Ｌ-Ｂ膜 |
The modification of Ni, Pb and LB films on the behavior of n-Si photoelectrode |
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| Abstract: | The effects of metal (Ni or Pb) and Langmuir-Blodgett (LB) films on the photoelectrochem. behavior of n-Si were studied. Ni and Pb can improve the energy conversion efficiency and the stability of n-Si. The modification of n-Si/Ni by LB films prepared with eight different organic compounds was determine and discussed; the efficiency of the photoelectrode was doubled by the best compound (long-chain coumarin LB film). The photoelectrochem. properties of Si/LB/Al electrode having the MIS structure were also studied. |
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| Keywords: | ELECTRODE SILICON NICKEL LEAD CHEMICAL MODIFIED ELECTRODE PHOTO-ELECTROCHEMISTRY L-B MEMBRANE |
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