金属修饰半导体硅组成光电化学电池的研究

本文以n/n^+-Si和p/n^+-Si为基底, 通过铂、镍等金属膜表面修饰后组成光电化学电池, 探讨了金属/n-Si间的Schottky势垒对电池开路光电压的影响。研究了铂膜修饰电极的光电化学性能。用p/n^+-Si电极, 在65mW·cm^-^2的光照射下, 最佳电池的输出参数是: 开路光电压0.530V, 短路光电流47.6mA·cm^-^2, 填充因子0.35, 光电转换效率13.6%, 连续照光75小时, 电池性能基本稳定。

A study on photoelectrochemical cells based on silicon modified by metal films

Photoelectrochem. cells of n/n+-Si or p/n+-Si with a metal (Pt, Au, Cu, Ni) Schottky barrier between the semiconductor and the Br redox couple electrolyte were studied. An optimized Pt/p/n+-Si cell had an open circuit voltage of 0.530 V, short circuit current of 47.6 mA/cm2, fill factor of 0.35 and energy conversion efficiency of 13.6%, under 65 mW/cm2 illumination. The photovoltaic parameters of some of the cells remained stable even after continuous irradiation for 75 h.