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层状MAgTeS3 (M=K, Rb)的溶剂热合成与表征
引用本文:白音孟和,叶玲,季首华,安永林,宁桂玲.层状MAgTeS3 (M=K, Rb)的溶剂热合成与表征[J].化学学报,2005,63(19):1829-1833.
作者姓名:白音孟和  叶玲  季首华  安永林  宁桂玲
作者单位:1. 大连理工大学化学系,大连,116024
2. 吉林大学超分子结构与材料教育部重点实验室,长春,130012
3. 大连理工大学材料系,大连,116024
基金项目:国家自然科学基金(No.20071006)资助项目.
摘    要:以硫醇为螯合剂, 在溶剂热条件下合成了两种层状硫代亚碲酸盐KAgTeS3 (1)和RbAgTeS3 (2). X射线单晶解析表明, 12是类质同晶化合物. 在晶体结构中, 银硫四面体通过共用顶点形成无限的平行链, 在相邻链中银硫四面体取向相反, 这些链与链由三角锥配位的碲互相连接形成阴离子层状结构, 阳离子在阴离子层间. 1的结晶学数据为: Mr=370.75, P21/c, a=0.73639(6) nm, b=1.06468(8) nm, c=0.85203(6) nm, β=106.4640(10)°, V=0.64062(8) nm3, Z=4, R(F)=4.44%, wR(F2)=11.66%. 2的结晶学数据: Mr=417.12, P21/c, a=0.75531(12) nm, b=1.07076(7) nm, c=0.8583(2) nm, β=106.497(6)°, V=0.66558(19) nm3, Z=4, R(F)=6.00%, wR(F2)=15.43%. DSC及紫外-可见漫反射光谱研究表明, 这两种化合物为半导体, 并具有很好的热稳定性.

关 键 词:溶剂热合成  四元金属硫代亚碲酸盐  晶体结构
收稿时间:2005-01-19
修稿时间:2005-01-192005-05-05

Solvothermal Synthesis and Characterization of MAgTeS3 (M=K, Rb) with Layered Structure
BAIYIN,Meng-He,YE,Ling,JI,Shou-Hua,AN,Yong-Lin,NING,Gui-Ling.Solvothermal Synthesis and Characterization of MAgTeS3 (M=K, Rb) with Layered Structure[J].Acta Chimica Sinica,2005,63(19):1829-1833.
Authors:BAIYIN  Meng-He  YE  Ling  JI  Shou-Hua  AN  Yong-Lin  NING  Gui-Ling
Institution:(Department of Chemistry, Dalian University of Technology, Dalian 116024)(Key Lab of Supramolecular Structure and Materials of Ministry of Education, Jilin University, Changchun 130012)( Department of Materials, Dalian Uni-versity of Technology, Dalian 116024)
Abstract:Two thio-tellurite KAgTeS3 (1) and RbAgTeS3 (2) were synthesized solvother-mally and characterized by X-ray single crystal diffraction. These isostructural compounds compose of infinite parallel chains formed by AgS4 tetrahedra sharing their vertices, and these chains are further connected by trigonal-pyramidally coordinated Te4+ to form anionic layered structure with cations located between the layers. Crystal data for 1: Mr=370.75, P21/c, a=0.73639(6) nm, b=1.06468(8) nm, c=0.85203(6) nm, β=106.4640(10)°, V=0.64062(8) nm3, Z=4, Mo Kα, λ=0.071073 nm, R(F)=4.44%, wR(F2)=11.66%. Crystal data for 2: Mr=417.12, P21/c, a=0.75531(12) nm, b=1.07076(7) nm, c=0.8583(2) nm, β=106.497(6)°, V=0.66558(19) nm3, Z=4, Mo Kα, λ=0.071073 nm, R(F)=6.00%, wR(F2)=15.43%. UV-Vis diffu-sion reflectance spectra suggest that the crystals 1 and 2 are semiconductor with estimated band gaps 2.03 and 2.10 eV, respectively. The DSC data show that crystal 1 and crystal 2 collapse at 333 and 352 ℃ respectively, in nitrogen.
Keywords:solvothermal synthesis  quaternary thio-tellurite  crystal structure
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