首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Highly charged ion induced nanostructures at surfaces by strong electronic excitations
Institution:1. ALBA Synchrotron Light Source (CELLS-ALBA), 08290, Cerdanyola del Vallès, Barcelona, Spain;2. Instituto de Óptica, Consejo Superior de Investigaciones Científicas (CSIC), C/Serrano 121, E-28006 Madrid, Spain;3. Centro de Microanálisis de Materiales (CMAM), Universidad Autónoma de Madrid (UAM), Cantoblanco, E-28049 Madrid, Spain;4. Instituto de Fusión Nuclear (UPM), C/ José Gutiérrez Abascal 2, E-28006 Madrid, Spain;1. Quantum Beam Science Research Directorate (QuBS), National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki, Gunma 370-1292, Japan;2. Division of Electronics and Informatics, Faculty of Science and Technology, Gunma University, Kiryu, Gunma 376-8515, Japan;3. Division for Experimental Physics, Ruđer Bošković Institute (RBI), 10000 Zagreb, Croatia;4. CEA-LIST, Diamond Sensors Laboratory, Gif-sur-Yvette F-091191, France;5. Sandia National Laboratories (SNL), P.O. Box 5800, Albuquerque, NM 87185-1056, USA
Abstract:Nanostructure formation by single slow highly charged ion impacts can be associated with high density of electronic excitations at the impact points of the ions. Experimental results show that depending on the target material these electronic excitations may lead to very large desorption yields in the order of a few 1000 atoms per ion or the formation of nanohillocks at the impact site. Even in ultra-thin insulating membranes the formation of nanometer sized pores is observed after ion impact. In this paper, we show recent results on nanostructure formation by highly charged ions and compare them to structures and defects observed after intense electron and light ion irradiation of ionic crystals and graphene. Additional data on energy loss, charge exchange and secondary electron emission of highly charged ions clearly show that the ion charge dominates the defect formation at the surface.
Keywords:Slow highly charged ion  HCI  Ion charge state  Nanostructure  Electronic excitation  Color centers
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号