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铝和硅元素掺杂对LaNi5电子结构影响的研究
引用本文:林玉芳,赵栋梁,王新林.铝和硅元素掺杂对LaNi5电子结构影响的研究[J].中国稀土学报,2006,24(5):556-562.
作者姓名:林玉芳  赵栋梁  王新林
作者单位:钢铁研究总院功能材料所,北京,100081
摘    要:采用第一原理离散变分法(DVM)研究了常用元素Al和Si掺杂对稀土系贮氢合金LaNi5电子结构的影响,在计算结果的基础上进一步探讨了微观结构对合金宏观性能的影响。分析结果表明:进入八面体间隙的H原子主要与LaNi5合金中非氢化物形成元素M和Ni发生较强的相互作用.而H原子与合金中的氢化物形成元素La的相互作用很弱。同时Al和Si两种掺杂元素对LaNi5合金性能的影响基本相似。

关 键 词:电子结构  第一原理  稀土
文章编号:1000-4343(2006)05-0556-07
收稿时间:01 17 2006 12:00AM
修稿时间:2006-01-172006-04-30

Effects of M-Doping (M = Al or Si) on Electronic Structure of LaNi5
Lin Yufang,Zhao Dongliang,Wang Xinlin.Effects of M-Doping (M = Al or Si) on Electronic Structure of LaNi5[J].Journal of the Chinese Rare Earth Society,2006,24(5):556-562.
Authors:Lin Yufang  Zhao Dongliang  Wang Xinlin
Institution:Central Iron and Steel Research institute, Beijing 100081, China
Abstract:Employing the first principles discrete variational method(DVM),the electronic structures of LaNi_5 hydrogen storage alloys with Ni replaced by common element M(M=Al or Si) were investigated.The results show that the s electrons of H mainly interact with the s electrons of non-hydride-forming element Ni and M,though there is a larger affinity of La for hydrogen than that of Ni and M in pure metal-hydrogen system.The effect on the electronic structure of Al is very similar to that of Si in the LaNi_5 alloy because of their similar character.
Keywords:LaNi5
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