铋膜修饰玻碳电极用于线性扫描溶出伏安法测定铝箔中痕量镓

用电化学沉积法将铋离子修饰在玻碳电极上,应用此铋膜修饰玻碳电极测定镓时,将试液在pH 5.4的六次甲基四胺-盐酸缓冲溶液中在-1.30 V处预还原40 s,然后在-1.30~-0.50 V范围内扫描,使镓离子从修饰电极上溶出,实现了镓离子的溶出伏安法测定,在-1.01 V处可得镓离子的氧化峰电位,镓的质量浓度在0.002 8~0.21μg.L-1范围内与其峰电流值呈线性关系,方法的检出限(3S/N)为0.7 ng.L-1。方法用于测定铝箔中镓的含量,加标回收率在98.2%~103.8%之间。

Linear Scanning Stripping Valtammetric Determination of Trace Amount of Gallium in Aluminum Foil Using Bismuth Film Modified Glassy Carbon Electrode

Bismuth film modified glassy carbon electrode was prepared by electrochemical deposition of Bi3+-ion on glassy carbon electrode(GCE).In the determination of Ga3+-ion,the test solution in(CH2)6N4-HCl buffer solution of pH 5.4 was prereduced for 40 s at-1.30 V,Ga3+-ion was then stripped from the electrode by differential pulse stripping voltammetery,scanning in the range from-1.30 to-0.50 V.Oxidation peak potential of Ga3+-ion was observed at-1.01 V,at where linear relationship between values of peak current ...