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Structure and Properties of Semiconductor Microclusters GanPn(n=1-4): A First Principle Study
作者姓名:ZHANGCai-rong  CHENHong-shan  WANGGuang-hou
作者单位:[1]CollegeofPhysicsandElectronicEngineering,NorthwestNormalUniversity,Lanzhou730070,P,R,China [2]NationalLaboratoryofSolidStateMicrostructure,NanjingUniversity,Nanjing210093,P.R.China
摘    要:The possible geometrical structures and relative stabilities of semiconductor microclusters Ga.P.(n=1-4) were studied by virtue of density functional calculations with generalized gradient approximation(B3LYP). For the most stable isomers of Ga,,P.(n=1-4) clusters, the electronic structure, vibrational properties. dipole moment, polarizability and ionization potential were analyzed by means of HF. MP2. CISD and B3L YP methods with different basis sets.

关 键 词:半导体  磷化镓  电子结构  稳定性  偶极矩  振动性能  极化度  离子电位

Structure and Properties of Semiconductor Microclusters GanPn(n=1-4):A First Principle Study
ZHANGCai-rong CHENHong-shan WANGGuang-hou.Structure and Properties of Semiconductor Microclusters GanPn(n=1-4):A First Principle Study[J].Chemical Research in Chinese University,2004,20(5):640-646.
Authors:ZHANG Cai-rong  CHEN Hong-shan  WANG Guang-hou
Abstract:The possible geometrical structures and relative stabilities of semiconductor microclusters GanPn(n= 1-4) were studied by virtue of density functional calculations with generalized gradient approximation (B3LYP).For the most stable isomers of GanPn(n= 1-4) clusters, the electronic structure, vibrational properties,dipole moment, polarizability and ionization potential were analyzed by means of HF, MP2, CISD and B3LYP methods with different basis sets.
Keywords:GanPn(n=1-4) cluster  Vibrational property  Ionization potential  Dipole moment  Polarizability
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