Quartz crystal microbalance simulation of the directionality of Si etching in CF4 glow discharges |
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Authors: | Natasha CUs R W Sadowski J W Coburn |
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Institution: | (1) IBM Research Laboratory, 650 Harry Rd., 95120-6099 San Jose, California;(2) Present address: Standard Micro Systems Corp., 35 Marcus Blvd., 11787 Hauppauge, New York |
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Abstract: | Two quartz crystal microbalances have been mounted in a planar rf discharge system in such a way that the potential of the microbalances with respect to the glow discharge can be varied. This apparatus allows a rapid simulation of the etching directionality that can be expected in real pattern transfer situations in that operating one microbalance at ground and one at a negative potential gives a measure of the sidewall and vertical etch rates, respectively. The voltage threshold for ion-assisted etching has been determined to be 20 V which is the approximate value of the plasma potential in this asymmetric system. |
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Keywords: | Plasma etching silicon in CF4 etching directionality micro balance |
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