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Etching Kinetics and Mechanisms of SiC Thin Films in F-, Cl- and Br-Based Plasma Chemistries
Authors:Lee  Byung Jun  Efremov  Alexander  Lee  Junmyung  Kwon  Kwang-Ho
Institution:1.Dept. of Control and Instrumentation Engineering, Korea University, Sejong, 339-700, South Korea
;2.Dept. of Electronic Devices & Materials Technology, State University of Chemistry & Technology, 7 Sheremetevsky av., Ivanovo, Russia, 153000
;
Abstract:Plasma Chemistry and Plasma Processing - The comparative study of SiC and SiO2 etching kinetics as well as the evaluation of SiC etching mechanisms in CF4?+?Ar, Cl2?+?Ar and...
Keywords:
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