含N-苯基马来酰亚胺甲基丙烯酸酯共聚物的合成及其在负性光致抗蚀剂中的应用

以甲基丙烯酸(MAA)、甲基丙烯酸甲酯(MMA)、N-苯基马来酰亚胺(N-PMI)、甲基丙烯酸环己基酯(CHMA)为反应单体,通过自由基共聚合成了一系列共聚物PMMNC,然后与甲基丙烯酸缩水甘油酯(GMA)反应制备了甲基丙烯酸酯共聚物G-PMMNC.利用傅立叶红外光谱(FT-IR)、核磁共振氢谱(¹HNMR)、凝胶渗透色谱(GPC)、差示扫描量热(DSC)等表征了共聚物的结构与性能.随着N-PMI含量的升高,共聚物的分子量增大,玻璃化转变温度升高;以G-PMMNC为基体树脂制备了光致抗蚀剂,考察了光致抗蚀剂的耐酸性和分辨率,研究结果表明,该光致抗蚀剂的耐酸性良好,分辨率为40 μm.

Synthesis of Methacrylate Copolymers Containing N-PMI and Their Application in Negative-type Photoresist

Methacrylic Acid (MAA), Methyl Methacrylate (MMA), N-Phenylmaleimide (N-PMI) and Methacrylic Acid Cyclohexyl Ester (CHMA) were used to synthesize copolymer with different content of N-Phenylmaleide (N-PMI) through free radical polymerization to develop a prepolymer(PMMNC). Then a methacrylate copolymer G-PMMNC was prepared by reaction of the PMMNC and Glycidyl Methacrylate (GMA). Fourier transform infrared spectroscopy (FT-IR), nuclear magnetic resonance spectroscopy (¹HNMR), gel permeation chromatography (GPC), and differential scanning calorimetry (DSC) were used to characterize the structure and properties of copolymers. The results showed that the molecular weight and the glass transition temperature of copolymers increased with the increase of the content of N-PMI. Negative-photoresists based on G-PMMNC were prepared,the resolution of which could reach 40 μm, and have a good acid etching resistance.