电化学沉积制备半导体CuInSe2薄膜

本文报道恒电位法在pH为1.35的Cu₂SO₄、SeO₂、In₂(SO₄)₃溶液中,在Ti电极上电化学沉积制备CuInSe₂纳米薄膜.研究络合剂柠檬酸和酒石酸对制备CuInSe₂纳米薄膜的影响.扫描电子显微镜(SEM)结果表明,加入络合剂后,电化学沉积的薄膜表面颗粒分布更均匀、致密.X射线衍射(XRD)分析显示,制备的CuInSe₂薄膜是黄铜矿和闪锌矿相的混和物,添加柠檬酸和酒石酸后,衍射峰增强,晶形变好.制备的薄膜颗粒尺寸大小在250nm左右,造成粒度增大的原因是由于颗粒的团聚作用.

ELECTRODEPOSITION OF CuInSe2 THIN FILMS

CuInSe2 films were deposited by potentiostatic on Ti electrode in the solution containing CuSO4， SeO2, In2（SO4）3 at pH＝1.35. Deposition potential ranges were determined by linear sweep method. SEM indicated that uniform and compact films were obtained after complexing agents were added. XRD showed that the CuInSe2 films consisted of chalcopyrite phase and sphalerite phase and the intensity of diffraction peaks increased when complexing agents exist. Particle size of the films is about 250 nm and could be explained by the fact that each grain observed under the microscope is a cluster of submicroscopic crystallites.