一种新型紫外正型光刻胶成膜树脂的制备及光刻性能研究

本文合成了N-(p-羧基苯基)甲基丙烯酰胺单体,并将其与N-苯基马来酰亚胺共聚得到共聚物聚N-(p-羧基苯基)甲基丙烯酰胺共N-苯基马来酰亚胺(poly(NCMA-co-NPMI)).将此共聚物作为成膜树脂,与感光剂、溶剂等复配得到一种新型耐高温紫外正型光刻胶.本文探讨了该光刻胶的最佳配方组成和最佳光刻工艺.最佳配方组成为:15%—20%成膜树脂,4.5%—6%感光剂和70%—80%溶剂;最佳光刻工艺为:匀胶30 s(4000 rpm),前烘4 min(90℃),感度为30—35mJ/cm~2,在0.2%TMAH溶液显影10 s和后烘2 min(90℃).

A Novel UV Photoresist Matrix Resin and Its Photolithographic Processes

The poly(N-(p-carboxylphenyl)methacrylamide-co-N-phenylmaleimide) was copolymerized with monomer N-(p-carboxylphenyl)methacrylamide (NCMA) and N-phenylmaleimide (NPMI). To apply this copolymer as the matrix resin with photosensitizer and solvents to fomulate a novel thermostable UV positive photoresist. The photoresist formulation and the photolithographic process were studied and optimized. Its optimal formulation was 15%-20% matrix resin, 4 5%-6% photo-sensitizer, and 70%-80% solvent, and its photolithographic process was spin-coating 30 s (4000 rpm), pre-baking 4 min at 90 ℃,exposuring 3 min, developing in 0.2% TMAH aqueous solution for 10 s and then post-baking 2 min at 90 ℃.