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硫增感AgBr I T颗粒乳剂光电子行为研究
引用本文:杨少鹏,董国义,陆晓东,李晓苇,傅广生.硫增感AgBr I T颗粒乳剂光电子行为研究[J].影像科学与光化学,2003,21(3).
作者姓名:杨少鹏  董国义  陆晓东  李晓苇  傅广生
作者单位:河北大学,物理科学与技术学院,保定,071002
基金项目:国家自然科学基金,教育部科学技术研究项目 
摘    要:本文利用微波吸收相敏检测技术,同时获得了硫增感AgBrIT颗粒乳剂,在不同增感条件下自由光电子和浅俘获光电子的时间衰减曲线,分析了不同的硫增感产物的陷阱效应.结果表明:开始时,增感产物起电子陷阱作用,至45min时,浅电子陷阱作用最佳.如增感时间进一步增加,硫增感产物将变为深电子陷阱.本文还讨论了浅电子陷阱中浅俘获光电子衰减时间与阱深的依存关系.

关 键 词:微波吸收相敏技术  硫增感  电子陷阱  光电子

PHOTOELECTRON ACTION IN THE SULFUR-SENSITIZED T-GRAINS AgBr I EMULSION
Abstract:The decay characteristics of photoelectrons and shallow trapped electrons have been obtained in the sulfur sensitized AgBr I T grains emulsion by microwave absorption and dielectric spectrum measure technique.The different results of different sensitizing time samples related to the effects of electron traps have been analyzed.It could be concluded that the sulfur sensitized centers will act as shallow electron traps at the time of 45 minutes,and act as deep electron traps with the continuous increase of sensitizing time.In addition,the relationships between the depths of different shallow traps and the decay times of shallow electrons have been also discussed.
Keywords:microwave absorption and dielectric spectrum measure technique  sulfur sensitization  electron trap  photoelectron
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