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The annealing behavior of hydrogen implanted into Al-1.5 at.% Si alloy |
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| Authors: | Masahiko Ogura Norikazu Nakatani Norisuke Yamaji Makoto Imai Akio Itoh Nobutsugu Imanishi |
| Institution: | Department of Nuclear Engineering, Kyoto University, Sakyo, Kyoto 606-01, Japan |
| Abstract: | We have studied effects of added elements as well as defects on trap-sites of hydrogen in metals. For the purpose, we observed depth profiles and thermal behaviors of hydrogen implanted into Al-1.5 at.% Si alloy samples in an implantation-temperature range of liquid nitrogen temperature (LNT) to 373 K at different doses. The results were compared with those for pure aluminum samples. It was found that hydrogen is trapped as molecules in grain boundaries of Al/Si. |
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