Novel valuable fluorine free copper(I) precursors for copper chemical vapor deposition |
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Authors: | Phong Dinh Tran Audrey Allavena-Valette Farah Kamous Pascal Doppelt |
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Institution: | 1. Laboratoire d’Ingénierie des Matériaux et des Hautes Pressions, UPR 1311, Institut Galilée, Université Paris 13, 99 avenue Jean-Baptiste Clément, 93430 Villetaneuse cedex, France;2. Institut de Chimie et des Matériaux Paris-Est, UMR 7182, 2-8 rue Henri Dunant, 94320 Thiais cedex, France |
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Abstract: | Novel fluorine free (β-diketonate)Cu(I)BTMSA precursors (where BTMSA is bis(trimethylsilyl) acetylene) were prepared in good yield (63–80%) by a simple acid–base reaction. The starting β-diketone structure was modified for tailoring physico-chemical properties of synthesized precursors. High volatile, relative thermally stable and low-melting precursors were prepared when asymmetric β-diketones were used. By using the (1-(cyclobutyl)-1,3-butandionate)Cu(I)BTMSA precursor, highly pure, compact and smooth copper films were deposited on Ta/TaN substrates at deposition temperatures as low as 150 °C. |
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