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Effect of irradiation in InGaAs photo devices |
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| Authors: | T Kudou H Ohyama E Simoen C Claeys J Vanhellemont K Sigaki Y Takami A Fujii |
| Institution: | (1) Kumamoto National College of Technology, 2659-2 Nishigoshi, 861-11 Kumamoto, Japan;(2) IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;(3) Wacker Siltronic AG, D-84479 Burghausen, Germany;(4) Rikkyo University, 2-5-1, Nagasaka, 240-01 Yokosuka, Kanagawa, Japan;(5) Kumamoto University, 39-1 Kurokami, 860 Kumamoto, Japan |
| Abstract: | Results are presented of an extended study on the degradation of electrical and optical performance and the induced lattice defects of In0.53Ga0.47As p-i-n photodiodes, subjected to a 20 MeV alpha-ray irradiation. The difference in radiation damage with 1 MeV fast neutrons and 1 MeV electrons is discussed taking into account the energy transfer. The radiation source dependence of performance degradation is attributed to the difference of mass and the probability of nuclear collision for the formation of lattice defects. |
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