Vertically well aligned P-doped ZnO nanowires synthesized on ZnO-Ga/glass templates |
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Authors: | Hsu Cheng-Liang Chang Shoou-Jinn Lin Yan-Ru Tsai Song-Yeu Chen I-Cherng |
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Institution: | Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China. |
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Abstract: | Vertically well aligned P-doped ZnO nanowires were prepared on ZnO-Ga/glass templates at 550 degrees C by reactive evaporation without metal catalysts and the nanowires were found to be single crystalline with the würtzite structure, oriented in the c-axis direction; the P-doping shortened the physical lengths of the ZnO nanowires without changing their diameter, and furthermore, the introduction of P atoms resulted in a much weaker and broader ZnO band edge emission. |
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