Abstract: | Increasing the length of N‐heteroacenes or their analogues is highly desirable because such materials could have great potential applications in organic electronics. In this report, the large π‐conjugated N‐heteroquinone 6,10,17,21‐tetra‐((triisopropylsilyl)ethynyl)‐5,7,9,11,16,18,20,22‐octaazanonacene‐8,19‐dione (OANQ) has been synthesized and characterized. The as‐prepared OANQ shows high stability under ambient conditions and has a particularly low LUMO level, which leads to it being a promising candidate for air‐stable n‐type field‐effect transistors (FETs). In fact, FET devices based on OANQ single crystals have been fabricated and an electron mobility of up to 0.2 cm2 V−1 s−1 under ambient conditions is reported. More importantly, no obvious degradation was observed even after one month. Theoretical calculations based on the single crystal are consistent with the measured mobility. |