| 正性远紫外抗蚀剂 Ⅰ.聚苯乙烯砜的研究 |
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| 引用本文： | 杨永源,高志民,冯树京,吴世康.正性远紫外抗蚀剂 Ⅰ.聚苯乙烯砜的研究[J].高分子学报,1984,0(6):408-413. |
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| 作者姓名： | 杨永源 高志民 冯树京 吴世康 |
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| 作者单位： | 中国科学院感光化学研究所
(杨永源，高志民，冯树京)，中国科学院感光化学研究所(吴世康) |
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| 摘 要： | 合成了一种高分辨率的正性远紫外抗蚀剂—聚苯乙烯砜。其灵敏度比PMMA高6.5倍。分辨率达0.75微米,并发现灵敏度与分子量和膜厚有较大的依赖关系,分子量越大,灵敏度越高;膜越薄,灵敏度越高,紫外和红外光谱表明,在光照过程中生成了氢过氧化物和羰基化合物。
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| 收稿时间： | 1982-11-24 |
A POSITIVE DEEP UV PHOTORESIST——Ⅰ. A Study of Poly (Styrene-Sulfone) |
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| Yang Yong-yuan,Gao Zhi-min,Feng Shu-jing,Wu Shi-kang.A POSITIVE DEEP UV PHOTORESIST——Ⅰ. A Study of Poly (Styrene-Sulfone)[J].Acta Polymerica Sinica,1984,0(6):408-413. |
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| Authors: | Yang Yong-yuan Gao Zhi-min Feng Shu-jing Wu Shi-kang |
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| Institution: | Institute of Photographic Chemistry; Academia Sinica |
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| Abstract: | Poly(styrene-sulfone) has been sythesized and evaluated as a positive deep UV resist for high resolution lithography. The resolution is 0.75 μm. The sensitivity is approximately 6.5 fold higher than PMMA. In this work we have found that the sensitivity depends greatly on the molecular weight and film thickness. The bigger the molecular weight, the higher the sensitivity. The thiner the thickness, the higher the sensitivity. Hydroperoxide and earbonyl group were observed during irradiation by the measurement of IR and UV spectroscopy. |
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