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Trends in the detection of pharmaceuticals and endocrine-disrupting compounds by Field-Effect Transistors (FETs)
Institution:1. Institut Supérieur de Biotechnologie de Monastir, Université de Monastir, Rue Taher Haddad, 5000, Monastir, Tunisia;2. Laboratoire Génie de l’Environnement et Ecotechnologie (GEET), Université de Sfax, Ecole Nationale d’Ingénieurs de Sfax (ENIS), Route de Soukra, Km 3,5, B.P. 1173, 3038, Sfax, Tunisia;3. Department of Electrical Engineering, École de Technologie Supérieure, Montreal, Quebec, Canada;4. Institut Supérieur de Biotechnologie de Sfax, Université de Sfax, Route de Soukra, Km 4,5, B.P 1175, 3038, Sfax, Tunisia;1. School of Physics and Electronics, Shandong Normal University, Jinan, 250014, People''s Republic of China;2. Department of Electrical Engineering, University at Buffalo North Campus, Buffalo, NY, 14260, USA;3. Shandong Key Laboratory of Biophysics, Institute of Biophysics, Dezhou University, Dezhou, 253023, People''s Republic of China;1. Laboratory of Water, Energy and Environment, National School of Engineers of Sfax (ENIS), University of Sfax, Route de Soukra Km 3,5 P.O. Box 1173, 3038 Sfax, Tunisia;2. Department of Chemistry & CESAM, University of Aveiro, Campus de Santiago, 3810-193 Aveiro, Portugal;3. ISEIT/Viseu, Instituto Piaget, Estrada do Alto do Gaio, Galifonge, 3515-776 Lordosa, Viseu, Portugal;4. INESC-MN, Rua Alves Redol 9, 1000-029 Lisbon, Portugal;5. Department of Biology & CESAM, University of Aveiro, Campus de Santiago, 3810-193 Aveiro, Portugal;1. Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of China;2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China;3. HwaMei Hospital, University of Chinese Academy of Sciences, Ningbo 315010, People’s Republic of China;4. Key Laboratory of Semiconductor Material Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of China;1. Department of Electronics and Telecommunications, Université 8 Mai 1945 Guelma, Guelma 24000, Algeria;2. Laboratory of Inverse Problems, Modeling, Information and Systems (PIMIS), Université 8 Mai 1945 Guelma, Guelma 24000, Algeria;3. Department of Electronics, Electrotechnics and Control, ISSIG, University of Gabes, Gabes 6000, Tunisia;4. Department of Electronics, ENET’com, University of Sfax, Sfax 3018, Tunisia;5. Laboratory of Advanced Electronic Systems and Sustainable Energy (ESSE), University of Sfax, Sfax 3018, Tunisia
Abstract:Field-effect transistors (FETs) are one of the most widely-used electronic sensors for continuous monitoring and detection of contaminants such as pharmaceuticals and endocrine-disrupting compounds at low concentrations. FETs have been successfully utilized for the rapid analysis of these environmental pollutants due to their advantageous material properties like the disposability, rapid responses and simplicity. This paper presented an up-to-date overview of applied strategies with different bio-based materials in order to enhance the analytical performances of the designed sensors. Comparison and discussion were made between characteristics of recently engineered FET bio-sensors used for the detection of famous and selected pharmaceutical compounds in the literature. The recent progress in environmental research applications, comments on interesting trends, current challenge for future research in endocrine-disrupting chemicals’ (EDCs) detection using FETs biosensors were highlighted.
Keywords:Fields-effect transistor (FET)  Nanomaterial-based FET biosensor  Endocrine-disrupting chemicals (EDCs)  Pharmaceutical residues  Water/wastewater
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