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CuI半导体膜的电化学制备与性质
引用本文:王钦忠,汪正浩.CuI半导体膜的电化学制备与性质[J].应用化学,2006,23(10):1161-0.
作者姓名:王钦忠  汪正浩
作者单位:北京师范大学化学学院,北京,100875
摘    要:CuI半导体膜的电化学制备与性质;CuI半导体;交流阻抗;平带电位

关 键 词:CuI半导体膜的电化学制备与性质  CuI半导体  交流阻抗  平带电位
文章编号:1000-0518(2006)10-1161-05
收稿时间:2005-11-09
修稿时间:2006-03-30

Electrochemical Preparation and Properties of CuI Semiconductor Film
WANG Qin-Zhong,WANG Zheng-Hao.Electrochemical Preparation and Properties of CuI Semiconductor Film[J].Chinese Journal of Applied Chemistry,2006,23(10):1161-0.
Authors:WANG Qin-Zhong  WANG Zheng-Hao
Institution:Department of Chemistry,Beijing Normal University,Beijing 100875
Abstract:Cuprous iodide semiconductor film consisted of a large amount of triangular sheets was prepared by means of electrochemical method.The electrochemical properties of the film were investigated in four(0.5 mol/L) Na_(2)SO_(4) solutions with pH values set at 0,2,4 and 7 via Electrochemical Impedance Spectroscopy(EIS).The result reveals that the pH value of electrolyte can affect the electrochemical properties.The lower the pH value is,the larger the reaction resistance is with the increase of pH,the surface scate density of the semiconductor was increased as the CuI lewis acid tends to absorb OH~(-) ion its surface easily.The flat-band potential measured in 0.5 mol/L(Na_(2)SO_4) solution with pH=0 is 0.002 3 V(vs.SCE).
Keywords:CuI semiconductor  Electrochemical Impedance Spectrum  flat-band potential
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