CuInSe2/氰桥混配物复合修饰光电极的制备及其光电性质

利用电沉积法在氰桥混配物预修饰的玻璃碳电极上再沉积CuInSe2半导体材料,制备了一种复合型修饰光电极(Eu-Fe-Mo/CuInSe2)。以含Cu2+、In3+、SeO23-及柠檬酸钠的酸性水溶液为电镀液,通过优化寻找到电镀液中最佳的Cu∶In∶Se料液比例,用恒电位电沉积法可以制备出具有良好光电效应的复合型修饰光电极。用SEM、EDS技术对复合修饰光电极的表面形貌及其修饰材料的元素组成进行了表征;以60 W的普通日光型白炽灯为光源,采用开路电压和计时安培法研究了该复合修饰光电极的光电性质。测得该光电极的响应光电压大于30 mV,响应光电流密度大于8.9×10-6A/cm2。实验结果表明,该复合修饰光电极呈现典型p型半导体的光电性质。

Preparation of Photoelectrode Modified with Cyanidebridged Mixed Complexes CuInSe2 and Investigation of Its Photovoltaic Properties

A novel modified compound photoelectrode(Eu-Fe-Mo/CuInSe2) was prepared successfully by electrodeposition of CuInSe2 semiconductor materials on the glassy carbon electrode,which was modified beforehand with cyanide-bridged mixed complexes.With the electroplating solution that contained Cu2+,In3+,SeO2-3 and sodium citrate in acidic aqueous solution,we found that there existed the best Cu∶ In∶ Se concentration ratio of added chemicals by optimizing procedure.The methods of SEM and EDS were employed to characterize the surface morphology of the modified compound photoelectrode and the elemental composite of CuInSe2 materials.Furthermore,with the ordinary daylight of 60 watts incandescent lamp as the light source,the photovoltaic properties of modified compound photoelectrode were investigated by means of open circuit potential and chronoamperometry,and its photovoltage and photocurrent density responses for the photoelectrode were measured to be more than 30 mV and 8.9×10-6 A/cm2,respectively.In addition,the experimental results showed that the photoelectrode had a typical p-type semiconductor photovoltaic property and had excellent photovoltaic response time.