| n-GaAs为基的光电化学电池输出特性 |
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| 引用本文： | 钱道荪,孙立中,沈毅.n-GaAs为基的光电化学电池输出特性[J].应用化学,1988,0(5):93-95. |
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| 作者姓名： | 钱道荪 孙立中 沈毅 |
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| 作者单位： | 上海交通大学应用化学系 |
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| 摘 要： | GaAs 的禁带宽度为1.428eV,而且是直接跃迁,是光电化学电池中很好的电极材料.一些作者研究了 n-GaAs 为基的光电化学电池1,2].本文讨论了光强,化学刻蚀、氧化还原对浓度及离子修饰对 n-GaAs 光电化学电池输出特性的影响.所用的电极为低阻 n-GaAs(100)面],ND=5.1×1017cm-3,试验前通高纯氮20分钟.测光强用的辐照计经上海计量局校正,其它测试方法同前文3].
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| 关 键 词： | 砷化镓 光电化学电池 |
| 收稿时间： | 1987-10-12 |
| 修稿时间： | 1988-01-20 |
A STUDY OF THE OUTPUT CHARACTERISTICS OF PHOTO ELECTROCHEMICAL CELL(PEC)BASED ON n-GaAs |
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| Qian Daosun Sun Lizbong Shen Yi.A STUDY OF THE OUTPUT CHARACTERISTICS OF PHOTO ELECTROCHEMICAL CELL(PEC)BASED ON n-GaAs[J].Chinese Journal of Applied Chemistry,1988,0(5):93-95. |
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| Authors: | Qian Daosun Sun Lizbong Shen Yi |
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| Institution: | Deportment of Applied Chemistry, Shanghai Jiaotong University |
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| Abstract: | In this paper the output characteristics of PEC cell based on n-GaAs are studied.The influences of light intensity,chemical etching,concentration of redox system and ion modi- fication on the conversion efficiency of PEC cell are observed.The conversion efficiency reaches 23.9% when the light intensity is low(9.61mW.cm~(-2)),with the electrode being repeatedly etched and modified by Ni~(2+) ion.The effect of pH on the flatband potential is determined. |
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| Keywords: | Gallium arsenide Photoelectrochemical cell |
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