高择优取向Cu电沉积层的XRD研究

采用电化学和XRD方法在CuSO4 H2SO4电解液中获得Cu电沉积层并研究其结构。结果表明，在4.0A/dm^2和15.0A/dm^2电流密度下可分别获得（220）和（111）晶面高择优取向Cu镀层；Cu镀层晶面织构度随厚度提高而增大，获得（111）晶面高择优Cu镀层的厚度约是（220）晶面的7倍，说明Cu（220）晶面比（111）晶面是更易保留的晶面，且低电流密度下铜的电结晶更容易受电沉积条件控制；较高的沉积电流密度有利于晶核的形成；Cu镀层存在晶格畸变和晶胞参数的涨大。

XRD Study on Highly Preferred Orientation Cu Electrodeposit

Copper electrodeposit was obtained in CuSO 4+H 2SO 4 electrolyte solution by electrodeposition and its structure was studied by XRD.The results showed that copper electoddeposits with the highly preferred orientations of (220)and (111) could be obtained at current density 4.0 A/dm 2 and 15.0 A/dm 2,respectively. The texture coefficient ( TC ) values were increased by thickness of Cu deposits. The thickness would be, to obtain Cu electrodeposit with(111) highly preferred orientation,about 7 times of that of (220) highly preferred orientation, which indicated that(220) face was easier to be remained than (111)face and that electrocrystallization of Cu at low current density would be easier controlled by electrodeposition condition.The higher deposition current density was benefit to nuclei formation. The Cu deposit was presented in the distortion and increase of crystal lattice.